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產(chǎn)片介紹:N-Channel Enhancement Mode MOSFETDescription The NP2300MR uses advanced trench technology to provide excellent RDS(ON) General Features , low gate charge and high
┄┄┄詳細介紹┄┄┄
N-Channel Enhancement Mode MOSFET
Description The NP2300MR uses advanced trench technology to provide excellent RDS(ON) General Features , low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications
? VDS =20V,ID R =5A DS(ON)(Typ.)=24m? @ VGS R =4.5V DS(ON)(Typ.)=30m? @VGS ? High power and current handing capability =2.5V ? Lead free product is acquired ? Surface mount package
Application ? PWM applications ? Load switch Package ? SOT-23-3L

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